Product Summary

The SKM75GB123D is an IGBT module. With MOS input (voltage controlled), this module has a low inductance. It has a very low tail current with low temperature dependence. This is an electrostatic discharge sensitive (ESDS), which is strictly accordance with international standard IEC 60747-1. It is widely used in AC inverter drivers and UPS.

Parametrics

Absolute maximum ratings:(1)Vces of IGBT, Tj=25℃, 1200V; (2)Ic of IGBT, Tj=150℃, Tcase=25℃: 75A; (3)Ic of IGBT, Tj=150℃, Tcase=90℃: 60A; (4)Icrm of IGBT, Icrm=2xIcnom: 150A; (5)Vges of IGBT: ±20V; (6)Tpsc of IGBT: Vcc=600V, Vge≤20V, Tj=125℃,Vces<1200V: 10μs; (7)If of inverse diodes, Tj=150℃, Tcase=25℃: 75A; (8)If of inverse diodes, Tj=150℃, Tcase=80℃: 50A; (9)Ifrm of inverse diodes, Ifrm=2xIfnom: 150A; (10)Ifsm of inverse diodes, Tp=10ms, sin., Tj=150℃: 480A; (11)If of freewheeling diode, Tj=150℃, Tcase=25℃: 95A; (12)If of freewheeling diode, Tj=150℃, Tcase=80℃: 65A; (13)Ifrm of freewheeling diode, Ifrm=2xIfnom: 200A; (14)Ifsm of freewheeling diode, Tp=10ms, sin., Tj=150℃: 720A.

Features

Features:(1)MOS input (voltage controlled); (2)low inductance; (3)very low tail current with low tempreture dependence; (4)high short circuit capability, self limiting to 6xIcnom; (5)latch-up free; (6)fast & soft inverse CAL diodes; (7)isolated copper baseplate using DCB direct copper bonding technology; (8)large clearance(10 mm) and creepage distance (20mm).

Diagrams

SKM75GB124D
SKM75GB124D

Other


Data Sheet

Negotiable 
SKM75GB173D
SKM75GB173D

Other


Data Sheet

Negotiable 
SKM75GD123D
SKM75GD123D

Other


Data Sheet

Negotiable